irfz48r sihfz48r.pdf datasheet:

IRFZ48R, SiHFZ48RVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Advanced Process TechnologyVDS (V) 60Available Ultra Low On-ResistanceRDS(on) ()VGS = 10 V 0.018 Dynamic dV/dt Rating RoHS*COMPLIANTQg (Max.) (nC) 110 175 C Operating Temperature Fast SwitchingQgs (nC) 29 Fully Avalanche RatedQgd (nC) 36 Drop in Replacement of the SiHFZ48 for Linear/AudioConfiguration SingleApplicationsD Compliant to RoHS Directive 2002/95/ECTO-220ABDESCRIPTIONAdvanced Power MOSFETs from Vishay utilize advancedprocessing techniques to achieve extremely lowon-resistance per silicon area. This benefit, combined withGthe fast switching speed and ruggedized device design thatPower MOSFETs are well known for, provides the designerSwith an extremely efficient and reliable device for use in aDG S wide variety of ap