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irgc15b60kb.pdf datasheet:

irgc15b60kb

PD - 94410IRGC15B60KBDie in Wafer FormFeaturesFeaturesFeaturesFeaturesFeatures600VC GEN5 Non Punch Through (NPT) TechnologyIC(nom)= 15A Low VCE(on)VCE(on) typ.=1.8V @ 10s Short Circuit Capability Square RBSOAIC(nom) @ 25C Positive VCE(on) Temperature CoefficientMotor Control IGBTGBenefitsShort Circuit Rated Benchmark Efficiency for Motor Control ApplicationsE150mm Wafer Rugged Transient Performance Excellent Current Sharing in Parallel OperationReference Standard IR Package Part: IRGS15B60KD Qualified for Industrial MarketElectrical Characteristics (Wafer Form)Parameter Description Guaranteed (min, max) Test ConditionsVCE (on) Collector-to-Emitter Saturation Voltage 0.95V min, 1.35V max IC = 3A, TJ = 25C, VGE = 15VV(BR)CES Colletor-to-Emitter Breakdown Voltage 600V min TJ = 25C,

 

Keywords - ALL TRANSISTORS DATASHEET

 irgc15b60kb.pdf Design, MOSFET, Power

 irgc15b60kb.pdf RoHS Compliant, Service, Triacs, Semiconductor

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