irh9250.pdf datasheet:

PD-91392DRADIATION HARDENED IRH9250POWER MOSFET 200V, P-CHANNELRAD Hard HEXFET TECHNOLOGYTHRU-HOLE (T0-204AE)Product SummaryPart Number Radiation Level RDS(on) ID IRH9250 100K Rads (Si) 0.315 -14A IRH93250 300K Rads (Si) 0.315 -14AInternational Rectifiers RADHard HEXFETTO-204AEtechnology provides high performance powerMOSFETs for space applications. This technologyhas over a decade of proven performance andFeatures:reliability in satellite applications. These devicesn Single Event Effect (SEE) Hardenedhave been characterized for both Total Dose andn Low RDS(on)Single Event Effects (SEE). The combination ofn Low Total Gate Chargelow Rdson and low gate charge reduces the powern Proton Tolerantlosses in switching applications such as DC to DCn Simple Drive Requirementsconverters and motor control. These devices retainn