ixfc22n60p.pdf datasheet:

IXFC 22N60P VDSS = 600 VPolarHVTM HiPerFETID25 = 12 APower MOSFET RDS(on) 360 m ISOPLUS220TMtrr 200 ns(Electrically Isolated Back Surface)N-Channel Enhancement ModeFast Intrinsic DiodeAvalanche RatedSymbol Test Conditions Maximum RatingsISOPLUS220TM (IXFC)VDSS TJ = 25 C to 150 C 600 VE153432VDGR TJ = 25 C to 150 C; RGS = 1 M 600 VVGS Continuous 30 VVGSM Tranisent 40 VGID25 TC = 25 C12 ADSIDM TC = 25 C, pulse width limited by TJM 66 A (Isolated back surface*)IAR TC = 25 C22 AG = Gate D = DrainEAR TC = 25 C40 mJS = SourceEAS TC = 25 C 1.0 JFeaturesldv/dt IS IDM, di/dt 100 A/s, VDD VDSS 10 V/nsSilicon chip on Direct-Copper-BondsubstrateTJ 150 C, RG = 4 - High power dissipationPD TC = 25 C 130 W - Isolated mo