ixfr180n085.pdf datasheet:

HiPerFETTM Power MOSFETsIXFR 180N085 VDSS = 85 VISOPLUS247TMID25 = 180 A(Electrically Isolated Back Surface)RDS(on)= 7 mWtrr 250 nsSingle MOSFET DiePreliminary data sheetSymbol Test Conditions Maximum Ratings ISOPLUS 247TM E153432VDSS TJ = 25C to 150C85 VVDGR TJ = 25C to 150C; RGS = 1 MW 85 VVGS Continuous 20 VVGSM Transient 30 VGDID25 TC = 25C (MOSFET chip capability) 180 AIsolated back surface*ID(RMS) External lead current limit 76 AIDM TC = 25C, Note 1 720 AIAR TC = 25C 180 AG = Gate D = DrainS = SourceEAR TC = 25C60 mJEAS TC = 25C3 J* Patent pendingdv/dt IS IDM, di/dt 100 A/ms, VDD VDSS 5 V/nsTJ 150C, RG = 2 WFeaturesPD TC = 25C 400 W Silicon chip on Direct-Copper-BondTJ -55 ... +150 CsubstrateTJM 150 C- High power dissipationTstg -55 ... +150 C- Isolated mou