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ixfr180n15p.pdf datasheet:

ixfr180n15pixfr180n15p

IXFR 180N15P VDSS = 150 VPolarHVTM HiPerFETID25 = 100 APower MOSFET RDS(on) 13 m ISOPLUS247TMtrr 200 ns(Electrically Isolated Back Surface)N-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeSymbol Test Conditions Maximum RatingsISOPLUS247 (IXFR)VDSS TJ = 25 C to 175 C 150 V E153432VDGR TJ = 25 C to 175 C; RGS = 1 M 150 VVGSS Continuous 20 VVGSM Transient 30 VGDISOLATED TABID25 TC = 25 C 100 A SID(RMS) External Lead current limit 75 AG = Gate D = DrainIDM TC = 25 C, pulse width limited by TJM 380 AS = SourceIAR TC = 25 C60 AEAR TC = 25 C 100 mJEAS TC = 25 C4 JFeaturesdv/dt IS IDM, di/dt 100 A/s, VDD VDSS, 10 V/nslTJ 150 C, RG = 4 International standard isolated packagePD TC = 25 C 300 WlUL recog

 

Keywords - ALL TRANSISTORS DATASHEET

 ixfr180n15p.pdf Design, MOSFET, Power

 ixfr180n15p.pdf RoHS Compliant, Service, Triacs, Semiconductor

 ixfr180n15p.pdf Database, Innovation, IC, Electricity

 

 
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