ixfr24n100q3.pdf datasheet:

Advance Technical InformationHiperFETTM VDSS = 1000VIXFR24N100Q3Power MOSFET ID25 = 18A Q3-Class RDS(on) 490m trr 300ns(Electrically Isolated Tab)N-Channel Enhancement ModeFast Intrinsic RectifierISOPLUS247E153432Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 1000 VVDGR TJ = 25C to 150C, RGS = 1M 1000 VVGSS Continuous 30 VGVGSM Transient 40 VIsolated TabDSID25 TC = 25C 18 AIDM TC = 25C, Pulse Width Limited by TJM 60 AG = Gate D = DrainIA TC = 25C 24 AS = SourceEAS TC = 25C2 Jdv/dt IS IDM, VDD VDSS, TJ 150C 50 V/nsPD TC = 25C 500 WFeaturesTJ -55 ... +150 CTJM 150 C Silicon Chip on Direct-Copper BondTstg -55 ... +150 C(DCB) Substrate Isolated Mounting SurfaceTL 1.6mm (0.062 in.) from Case for 10s 30