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ixgh64n60b3.pdf datasheet:

ixgh64n60b3ixgh64n60b3

Preliminary Technical InformationIXGH64N60B3 VCES = 600VGenX3TM 600V IGBTIXGT64N60B3IC110 = 64AMedium speed low Vsat PTVCE(sat) 1.8VIGBTs for 5 - 40kHz switchingtfi(typ) = 88nsSymbol Test Conditions Maximum RatingsTO-247 (IXGH)VCES TC = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VVGEM Transient 30 VGC (TAB)CEIC110 TC = 110C 64 AICM TC = 25C, 1ms 400 ATO-268 (IXGT)SSOA VGE = 15V, TVJ = 125C, RG = 3 ICM = 200 A(RBSOA) Clamped inductive load @ 600VPC TC = 25C 460 WGETJ -55 ... +150 CC (TAB)TJM 150 CTstg -55 ... +150 CG = Gate C = CollectorE = Emitter TAB = CollectorTL 1.6mm (0.062 in.) from case for 10s 300 CTSOLD Plastic body for 10 seconds 260 CFeaturesMd Mounting torque (TO-247) 1.13/10 Nm/lb.in. Weight TO-247 6 gOp

 

Keywords - ALL TRANSISTORS DATASHEET

 ixgh64n60b3.pdf Design, MOSFET, Power

 ixgh64n60b3.pdf RoHS Compliant, Service, Triacs, Semiconductor

 ixgh64n60b3.pdf Database, Innovation, IC, Electricity

 

 
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