ixgn50n120c3h1.pdf datasheet:

Advance Technical InformationVCES = 1200VGenX3TM 1200VIXGN50N120C3H1IC110 = 50AIGBT w/ DiodeVCE(sat) 4.2VHigh-Speed PT IGBT for20-50 kHz SwitchingSOT-227B, miniBLOC E153432Symbol Test Conditions Maximum RatingsE VCES TJ = 25C to 150C 1200 VGVCGR TJ = 25C to 150C, RGE = 1M 1200 VVGES Continuous 20 VVGEM Transient 30 VE IC25 TC = 25C 95 ACIC110 TC = 110C 50 AIF110 TC = 110C 58 A G = Gate, C = Collector, E = Emitter either emitter terminal can be used asICM TC = 25C, 1ms 240 AMain or Kelvin EmitterSSOA VGE= 15V, TVJ = 125C, RG = 2 ICM = 100 A(RBSOA) Clamped Inductive Load VCE VCESPC TC = 25C 460 WFeaturesTJ -55 ... +150 C Optimized for Low Switching LossesTJM 150 C Square RBSOATstg -55 ... +150 C High Current CapabilityVISOL 50/60Hz t = 1min 250