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ixgn50n60b.pdf datasheet:

ixgn50n60bixgn50n60b

HiPerFASTTM IGBT IXGN 50N60B VCES = 600 V IC25 = 75 A VCE(sat) = 2.3 Vtfi(typ) = 120nsPreliminary data sheetESymbol Test Conditions Maximum RatingsSOT-227B miniBLOCE153432E VCES TJ = 25C to 150C 600 VGVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VVGEM Transient 30 VE IC25 TC = 25C75 ACIC90 TC = 90C50 AG = Gate, C = Collector, E = EmitterICM TC = 25C, 1 ms 200 A Either emitter terminal can be usedas Main or Kelvin EmitterSSOA VGE = 15 V, TVJ = 125C, RG = 10 ICM = 100 A(RBSOA) Clamped inductive load, L = 30 H @ 0.8 VCESPC TC = 25C 300 WFeatures TJ -55 ... +150 C International standard packageSOT-227BTJM 150 C Aluminium nitride isolationTstg -55 ... +150 C- high power dissipation Isolation voltage 3000 V~Md Mounting torque 1.5/13 Nm/lb.in. Terminal connection

 

Keywords - ALL TRANSISTORS DATASHEET

 ixgn50n60b.pdf Design, MOSFET, Power

 ixgn50n60b.pdf RoHS Compliant, Service, Triacs, Semiconductor

 ixgn50n60b.pdf Database, Innovation, IC, Electricity

 

 
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