ixgn72n60c3h1.pdf datasheet:
GenX3TM 600V IGBT VCES = 600VIXGN72N60C3H1with Diode IC110 = 52AVCE(sat) 2.50Vtfi(typ) = 55nsHigh-Speed Low-Vsat PTIGBTs 40-100 kHz SwitchingSOT-227B, miniBLOC E153432Symbol Test Conditions Maximum RatingsE VCES TJ = 25C to 150C 600 VGVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VVGEM Transient 30 VE IC25 TC = 25C 78 ACIC110 TC = 110C 52 AG = Gate, C = Collector, E = EmitterICM TC = 25C, 1ms 360 A either emitter terminal can be used asIA TC = 25C50 A Main or Kelvin EmitterEAS TC = 25C 500 mJSSOA VGE= 15V, TVJ = 125C, RG = 2 ICM = 150 AFeatures(RBSOA) Clamped Inductive Load @ VCE VCES PC TC = 25C 360 WOptimized for Low Switching Losses Square RBSOATJ -55 ... +150 C Aluminium Nitride IsolationTJM 150 C- High Power Dissipation Tstg -5
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ixgn72n60c3h1.pdf Design, MOSFET, Power
ixgn72n60c3h1.pdf RoHS Compliant, Service, Triacs, Semiconductor
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