ixgt28n60bd1.pdf datasheet:

Low VCE(sat) IXGH 28N60BD1 VCES = 600 VIGBT with Diode IXGT 28N60BD1 IC25 = 40 AVCE(sat) = 2.0 VCombi PackSymbol Test Conditions Maximum Ratings TO-268(IXGT)VCES TJ = 25C to 150C 600 VGVCGR TJ = 25C to 150C; RGE = 1 M 600 VC (TAB)EVGES Continuous 20 VVGEM Transient 30 V TO-247 AD(IXGH)IC25 TC = 25C40 AIC90 TC = 90C28 AICM TC = 25C, 1 ms 80 AC (TAB)GCSSOA VGE = 15 V, TVJ = 125C, RG = 10 ICM = 56 AE(RBSOA) Clamped inductive load @ 0.8 VCESG = Gate, C = Collector,PC TC = 25C 150 W E = Emitter, TAB = CollectorTJ -55 ... +150 CFeaturesTJM 150 C Tstg -55 ... +150 C International standard packages IGBT and anti-parallel FRED in oneMd Mounting torque (M3) TO-247 1.13/10 Nm/lb.in.packageMaximum lead temperature for soldering 300 C Low VCE(sat)1.6 mm (0.062 in.) from case for 10 s- fo