ixta180n055t ixtp180n055t ixtq180n055t.pdf datasheet:
Advance Technical InformationIXTQ 180N055T VDSS = 55 VTrench GateIXTA 180N055T ID25 = 180 APower MOSFETIXTP 180N055T RDS(on) = 4.0 mN-Channel Enhancement ModeTO-3P (IXTQ)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 175C55 VGVDGR TJ = 25C to 175C; RGS = 1 M 55 VD(TAB)SVGSM 20 VTO-220 (IXTP)ID25 TC = 25C 180 AIDRMS External lead current limit 75 AIDM TC = 25C, pulse width limited by TJM 600 AIAR TC = 25C75 A(TAB)GDSEAS TC = 25C 1.0 JTO-263 (IXTA)dv/dt IS IDM, di/dt 100 A/s, VDD VDSS, 3 V/nsTJ 150C, RG = 10 PD TC = 25C 360 WGTJ -55 ... +175 CSTJM 175 C(TAB)Tstg -55 ... +150 CG = Gate D = DrainTL 1.6 mm (0.062 in.) from case for 10 s 300 CS = Source TAB = DrainMaximum tab temperature for soldering 260 CTO-263 package for 1
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