ixta180n085t7.pdf datasheet:

Preliminary Technical InformationVDSS = 85 VIXTA180N085T7TrenchMVTMID25 = 180 APower MOSFET RDS(on) 5.5 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (7-lead) (IXTA..7)VDSS TJ = 25 C to 175 C85 VVDGR TJ = 25 C to 175 C; RGS = 1 M 85 VVGSM Transient 20 V1ID25 TC = 25 C 180 A7ILRMS Package Current Limit, RMS 160 A(TAB)IDM TC = 25 C, pulse width limited by TJM 480 APin-out:1 - Gate2, 3 - SourceIAR TC = 25 C25 A4 - NC (cut)EAS TC = 25 C 1.0 J5,6,7 - SourceTAB (8) - Draindv/dt IS IDM, di/dt 100 A/s, VDD VDSS 3 V/nsTJ 175 C, RG = 5 PD TC = 25 C 430 WFeatures Ultra-low On ResistanceTJ -55 ... +175 C Unclamped Inductive Switching (UIS)TJM 175 CratedTstg -55 ... +175 C Low package ind