ixta180n085t ixtp180n085t.pdf datasheet:

Preliminary Technical InformationIXTA180N085T VDSS = 85 VTrenchMVTMIXTP180N085T ID25 = 180 APower MOSFET RDS(on) 5.5 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (IXTA)VDSS TJ = 25 C to 175 C85 VVDGR TJ = 25 C to 175 C; RGS = 1 M 85 VGVGSM Transient 20 VS(TAB)ID25 TC = 25 C 180 AILRMS Lead Current Limit, RMS 75 ATO-220 (IXTP)IDM TC = 25 C, pulse width limited by TJM 480 AIAR TC = 25 C25 AEAS TC = 25 C 1.0 Jdv/dt IS IDM, di/dt 100 A/s, VDD VDSS 3 V/nsG(TAB)DTJ 175 C, RG = 5 SPD TC = 25 C 430 WG = Gate D = DrainS = Source TAB = DrainTJ -55 ... +175 CTJM 175 CFeaturesTstg -55 ... +175 C Ultra-low On Resistance TL 1.6 mm (0.062 in.) from case for 10 s 300 C Unclamped Inductive Swi