kdb15n50.pdf datasheet:

SMD Type MOSFETN-Channel SMPS Power MOSFETKDB15N50(FDB15N50)FeaturesTO-263Unit: mmLow Gate Charge Qg results in Simple Drive Requirement+0.24.57-0.2+0.1Improved Gate, Avalanche and High Reapplied dv/dt1.27-0.1RuggednessReduced rDS(ON)Reduced Miller Capacitance and Low Input Capacitance+0.10.1max1.27-0.1Improved Switching Speed with Low EMI+0.10.81-0.12.54 1Gate+0.22Drain2.54-0.2 +0.1 +0.25.08-0.1 0.4-0.23 SourceAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitDrain to source voltage VDSS 500 VGate to source voltage VGSS 30 VDrain current TC=25 ID 15 ADrain current-pulsed Idp 60 APower dissipation 300 WPDDerate above 25 2 W/Thermal Resistance Junction to Ambient RJA 62 /WChannel temperature Tch 175Storage temperature Tstg -55to+1751www.kexin.com.cn+0.11.27-0.15.60+0.28.715.25-0.