mmpq3906.pdf datasheet:

MMPQ3906Preferred DeviceQuad Amplifier/SwitchTransistorPNP Siliconhttp://onsemi.com1 16MAXIMUM RATINGS2 15Rating Symbol Value Unit3 144 13Collector-Emitter Voltage VCEO -40 Vdc5 126 11Collector-Base Voltage VCB -40 Vdc7 10Emitter-Base Voltage VEB -5.0 Vdc8 9Collector Current - Continuous IC -200 mAdcEachTransistorPower Dissipation @ TA = 25C PD 200 mWDerate above 25C 3.2 mW/C16Power Dissipation @ TC = 25C PD 0.66 WattsDerate above 25C 5.3 mW/C1FourSO-16TransistorsCASE 751BEqual PowerSTYLE 4Power Dissipation @ TA = 25C PD 800 mWDerate above 25C 6.4 mW/CMARKING DIAGRAMPower Dissipation @ TC = 25C PD 1.92 WattsDerate above 25C 15.4 mW/COperating and Storage TJ, Tstg -55 to +150 CJunction Temperature Range MMPQ3906AWLYWWMMPQ3906 = Specific Device CodeA = Assembly LocationWL =

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