ne680xx 2sc5013 2sc5008 2sc4228 2sc3585 2sc3587 2sc4095.pdf datasheet:
NEC's NPN SILICON HIGH NE680FREQUENCY TRANSISTOR SERIESFEATURES HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz LOW NOISE FIGURE:1.7 dB at 2 GHz2.6 dB at 4 GHz HIGH ASSOCIATED GAIN:12.5 dB at 2 GHz8.0 dB at 4 GHz EXCELLENT LOW VOLTAGE00 (CHIP) 35 (MICRO-X)LOW CURRENT PERFORMANCEDESCRIPTIONNEC's NE680 series of NPN epitaxial silicon transistors isdesigned for low noise, high gain and low cost applications.19 (3 PIN ULTRABoth the chip and micro-x versions are suitable for applications18 (SOT 343 STYLE) SUPER MINI MOLD)up to 6 GHz. The NE680 die is also available in six different lowcost plastic surface mount package styles. The NE680's highfT makes it ideal for low voltage/low current applications, downto as low as 0.5 V / 0.5 mA. IC max for the NE680 series is35 mA. For higher current applications see the NE681 series.30 (SOT 323 STY
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ne680xx 2sc5013 2sc5008 2sc4228 2sc3585 2sc3587 2sc4095.pdf Design, MOSFET, Power
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