p057aat.pdf datasheet:

P057AATN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID75V 5.8m @VGS = 10V 129ATO-220ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTC = 25 C129IDContinuous Drain Current1TC = 100 C82AIDM410Pulsed Drain Current2IASAvalanche Current 60EASAvalanche Energy L = 0.3mH 557 mJTC = 25 C192PDPower Dissipation WTC = 100 C77TJ, TSTGOperating Junction & Storage Temperature Range -55 to 150CTL275Lead Temperature (1/16" from case for 10 sec.)THERMAL RESISTANCE RATINGSTHERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITSJunction-to-Case RqJC 0.65C / WJunction-to-Ambient RqJA 631Limited by package.2Pulse width limited by maximum junction temperature.Ver 1.0 1 2012/4/16P057AATN-Chan