ph2625l.pdf datasheet:

PH2625LN-channel TrenchMOS logic level FETRev. 02 24 February 2005 Preliminary data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plasticpackage using TrenchMOS technology.1.2 Features Optimized for use in DC-to-DC Very low switching and conductionconverters losses Low threshold voltage Low thermal resistance.1.3 Applications DC-to-DC converters Switched-mode power supplies Voltage regulators Notebook computers.1.4 Quick reference data VDS 25 V ID 100 A Qgd = 7.3 nC (typ) Qg(tot) = 32 nC (typ) RDSon 2.8 m (VGS =10V) RDSon 4.1 m (VGS = 4.5 V).2. Pinning informationTable 1: PinningPin Description Simplified outline Symbol1, 2, 3 sourceD4 gatembmb mounting base; connected to drainGmbb076 S1 2 3 4SOT669 (LFPAK)PH2625LPhili