ph3030al.pdf datasheet:

PH3030ALN-channel TrenchMOS logic level FETRev. 03 12 January 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing and consumer applications.1.2 Features and benefits High efficiency due to low switching Suitable for logic level gate drive and conduction losses sources1.3 Applications Consumer applications Notebook Voltage Regulator Module (VRM) Desktop Voltage Regulator Module (VRM)1.4 Quick reference dataTable 1. Quick referenceSymbol Parameter Conditions Min Typ Max UnitVDS drain-source voltage Tj 25 C; Tj 175 C - - 30 V[1]ID drain current Tmb =25C; VGS =10V; - - 100 Asee Figure 1Ptot total power Tmb = 25 C; see Figure 2 - - 81 W