phb12nq15t phd12nq15t php12nq15t 1.pdf datasheet:

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP12NQ15T, PHB12NQ15T PHD12NQ15TFEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 150 V Fast switching Low thermal resistance ID = 12.5 AgRDS(ON) 200 msGENERAL DESCRIPTIONN-channel enhancement mode field-effect power transistor in a plastic envelope using trench technology. The devicehas very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications.The PHP12NQ15T is supplied in the SOT78 (TO220AB) conventional leaded package.The PHB12NQ15T is supplied in the SOT404 (D2PAK) surface mounting package.The PHD12NQ15T is supplied in the SOT428 (DPAK) surface mounting package.PINNING SOT78 (TO220AB) SOT404 (D2PAK) SOT428 (DPAK)tabPIN DESCRIPTION tabt