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php125n06lt 4.pdf datasheet:

php125n06lt_4php125n06lt_4

Philips Semiconductors Product specification TrenchMOS transistor PHP125N06LT, PHB125N06LT Logic level FETFEATURES SYMBOL QUICK REFERENCE DATA Trench technology VDSS = 55 Vd Very low on-state resistance Fast switching ID = 75 A Stable off-state characteristics High thermal cycling performance RDS(ON) 8 m (VGS = 5 V)g Low thermal resistanceRDS(ON) 7 m (VGS = 10 V)sGENERAL DESCRIPTIONN-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using trench technology.The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switchingapplications.The PHP125N06LT is supplied in the SOT78 (TO220AB) conventional leaded package.The PHB125N06LT is supplied in the SOT404 surface mounting package.PINNING SOT78 (TO220AB) SOT40

 

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