php125n06t 1.pdf datasheet:

Philips Semiconductors Product specification TrenchMOS transistor PHP125N06T Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope using VDS Drain-source voltage 55 Vtrench technology. The device ID Drain current (DC)1 75 Afeatures very low on-state resistance Ptot Total power dissipation 250 Wand has integral zener diodes giving Tj Junction temperature 175 CESD protection up to 2kV. It is RDS(ON) Drain-source on-state 8 mintended for use in DC-DC resistance VGS = 10 Vconverters and general purposeswitching applications.PINNING - TO220AB PIN CONFIGURATION SYMBOLPIN DESCRIPTIONdtab1 gate2 draing3 sourcetab drains1 2 3LIMITING VALUESLimiting values in accordance with the Absolute Maximum System (IEC 1