php12n10e 1.pdf datasheet:

Philips Semiconductors Product Specification PowerMOS transistor PHP12N10E GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic envelope. The device is VDS Drain-source voltage 100 Vintended for use in Switched Mode ID Drain current (DC) 14 APower Supplies (SMPS), motor Ptot Total power dissipation 75 Wcontrol, welding, DC/DC and AC/DC Tj Junction temperature 175 Cconverters, and in general purpose RDS(ON) Drain-source on-state resistance 0.16 switching applications.PINNING - TO220AB PIN CONFIGURATION SYMBOLPIN DESCRIPTION dtab1 gate2 draing3 sourcetab drain1 2 3sLIMITING VALUESLimiting values in accordance with the Absolute Maximum System (IEC 134)SYMBOL PARAMETER CONDITIONS MIN. MAX. UNITVDS Drain-source voltage - - 100 VVDGR Drain-gate voltage RGS