php176nq04t.pdf datasheet:

PHP176NQ04TN-channel TrenchMOS standard level FETRev. 02 6 March 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Features and benefits Low conduction losses due to low Suitable for standard level gate drive on-state resistance sources1.3 Applications DC-to-DC convertors Motors, lamps and solenoids General industrial applications Uninterruptible power supplies1.4 Quick reference dataTable 1. Quick referenceSymbol Parameter Conditions Min Typ Max UnitVDS drain-source voltage Tj 25 C; Tj 175 C - - 40 VID drain current Tmb =25C; VGS =10V; - - 75 Asee Figure 1; see Figure 3P