ptp04n04n.pdf datasheet:

PTP04N04N 40V N-Channel Trench MOSFET General Features BVDSS RDS(ON),typ. ID Proprietary New Trench Technology 40V 3.0m 206A RDS(ON),typ.=3.0m @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications DC-DC Converters DC-AC Inverters G Power Supply D S TO-220 Ordering Information Package No to Scale Part Number Package Brand PTP04N04N TO-220 Absolute Maximum Ratings TC=25 unless otherwise specified Symbol Parameter PTP04N04N Unit VDSS Drain-to-Source Voltage[1] 40 V VGSS Gate-to-Source Voltage 20 Continuous Drain Current[2] 206 ID Continuous Drain Current[3] 80 A IDM Pulsed Drain Current at VGS=10V[2,4] 480 EAS Single Pulse Avalanche Energy 500 mJ dv/dt Peak Diode Recovery dv/dt[3] 5.0 V/ns Power Dissipation 300 W PD Derating Factor above 25 2 W/ Maximum Temperature