r07ds0294ej rqj0302ngd.pdf datasheet:

Preliminary Datasheet RQJ0302NGDQA R07DS0294EJ0500(Previous: REJ03G1271-0400)Silicon P Channel MOS FET Rev.5.00Power Switching Mar 28, 2011Features Low on-resistance RDS(on) = 138 m typ (VGS = 10 V, ID = 1.1 A) Low drive current High speed switching 4.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A(Package name: MPAK)3D3G 1. Source2 2. Gate13. Drain2S1Note: Marking is NG. Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings UnitDrain to source voltage VDSS 30 VGate to source voltage VGSS +10 / 20 V Drain current ID 2.2 ADrain peak current ID(Pulse) Note1 5 ABody - drain diode reverse drain current IDR 2.2 AChannel dissipation Pch Note2 0.8 WChannel temperature Tch 150 C Storage temperature Tstg 55 to +150 C Notes: 1. PW 10 s, duty