r07ds0295ej rqj0303pgd.pdf datasheet:

Preliminary Datasheet RQJ0303PGDQA R07DS0295EJ0500(Previous: REJ03G1272-0400)Silicon P Channel MOS FET Rev.5.00Power Switching Mar 28, 2011Features Low on-resistance RDS(on) = 54 m typ (VGS = 10 V, ID = 1.6 A) Low drive current High speed switching 4.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A(Package name: MPAK)3D3G 1. Source2 2. Gate13. Drain2S1Note: Marking is PG. Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings UnitDrain to source voltage VDSS 30 VGate to source voltage VGSS +10 / 20 V Drain current ID 3.3 ADrain peak current ID(Pulse) Note1 5 ABody - drain diode reverse drain current IDR 3.3 AChannel dissipation Pch Note2 0.8 WChannel temperature Tch 150 C Storage temperature Tstg 55 to +150 C Notes: 1. PW 10 s, duty cycle