r07ds0296ej rqj0304dqd.pdf datasheet:

Preliminary Datasheet RQJ0304DQDQA R07DS0296EJ0200(Previous: REJ03G1717-0100)Silicon P Channel MOS FET Rev.2.00Power Switching Mar 28, 2011Features Low gate drive VDSS : 30 V and 2.5 V gate drive Low drive current High speed switching Small traditional package (MPAK) Outline RENESAS Package code: PLSP0003ZB-A(Package name: MPAK) 3D321. SourceG12. Gate3. Drain2S1Notes: Marking is "DQ". Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings UnitDrain to source voltage VDSS 30 VGate to source voltage VGSS +8 / 12 V Drain current ID 1.8 ADrain peak current ID(pulse) Note1 8 ABody - drain diode reverse drain current IDR 1.8 AChannel dissipation Pch Note2 0.8 WChannel temperature Tch 150 C Storage temperature Tstg 55 to +150 C Notes: 1. PW 10 s, Duty cycle 1%