r07ds0308ej rqk0604igd.pdf datasheet:

Preliminary Datasheet RQK0604IGDQA R07DS0308EJ0200(Previous: REJ03G1496-0100)Silicon N Channel MOS FET Rev.2.00Power Switching Mar 28, 2011Features Low on-resistance RDS(on) = 111 m typ.(at VGS = 4.5 V, ID = 1 A) Low drive current High speed switching VDSS 60 V and capable of 2.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A(Package name: MPAK) 3D321. SourceG12. Gate3. Drain2S1Note: Marking is IG. Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings UnitDrain to source voltage VDSS 60 VGate to source voltage VGSS 12 VDrain current ID 2 ADrain peak current ID(pulse) Note1 8 ABody - drain diode reverse drain current IDR 2 AChannel dissipation Pch Note2 0.8 WChannel temperature Tch 150 C Storage temperature Tstg 55 to +150 C Notes: 1. PW 10 s, Duty