r07ds0309ej rqk0605jgd.pdf datasheet:

Preliminary Datasheet RQK0605JGDQA R07DS0309EJ0500(Previous: REJ03G1278-0400)Silicon N Channel MOS FET Rev.5.00Power Switching Mar 28, 2011Features Low on-resistance RDS(on) = 82 m typ (VGS = 10 V, ID = 1.5 A) Low drive current High speed switching 4.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A(Package name: MPAK)3D3G 1. Source2 2. Gate13. Drain2S1Note: Marking is JG. Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings UnitDrain to source voltage VDSS 60 VGate to source voltage VGSS 20 VDrain current ID 3.1 ADrain peak current ID(Pulse) Note1 4.5 ABody - drain diode reverse drain current IDR 3.1 AChannel dissipation Pch Note2 0.8 WChannel temperature Tch 150 C Storage temperature Tstg 55 to +150 C Notes: 1. PW 10 s, duty cycle 1% 2. Wh