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s8050 to-92.pdf datasheet:

s8050_to-92s8050_to-92

S8050(NPN)TO-92 Bipolar Transistors 1. EMITTER TO-92 2. BASE 3. COLLECTOR Features Complimentary to S8550 Collector current: IC=0.5A MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol ParameterValue UnitsVCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.5 A Dimensions in inches and (millimeters)PC Collector Power Dissipation 0.625 W TJ Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100A, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC= 0.1mA, IB=0 25 VEmitter-base breakdown voltage V(BR)EBO IE= 100A, IC=0 5 VCollector cut-off current ICBO VCB= 40

 

Keywords - ALL TRANSISTORS DATASHEET

 s8050 to-92.pdf Design, MOSFET, Power

 s8050 to-92.pdf RoHS Compliant, Service, Triacs, Semiconductor

 s8050 to-92.pdf Database, Innovation, IC, Electricity

 

 
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