ssf7ns65g.pdf datasheet:

SSF7NS65G Main Product Characteristics: VDSS 650V RDS(on) 0.58 (typ.) ID 7A TO-251 Mark in g a nd pin Sch ema tic diag r a m Assignment Features and Benefits: Feathers: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF7NS65G series MOSFETs is a new technology, which combines an innovative super junction technology and advance process. This new technology achieves low Rdson, energy saving, high reliability and uniformity, superior power density and space saving. Absolute max Rating: Symbol Parameter Max. Units ID @ TC = 25 Continuous Drain Current, VGS @ 10V 7 C I @ TC = 100 Continuous Drain Current, V @ 10V 5 A C D GSI Pulsed Drain Current 28 DMPower Dissipation 83 W P @TC = 25C DLinear