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ssf8n60.pdf datasheet:

ssf8n60ssf8n60

SSF8N60 Features VDSS = 600V Extremely high dv/dt capability ID = 8A Low Gate Charge Qg results in Simple Drive Requirement Rdson = 0.85 (typ.) 100% avalanche tested Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeatability Description The SSF8N60 is a new generation of high voltage NChannel enhancement mode power MOSFETs and is obtained through an extreme optimization layout design, in additional to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability, provide superior switching performance, withstand high energy pulse in the avalanche, and increases packing density. Application SSF8N60 TOP View (TO220) High current, high speed switching Ideal for off-line power supply, adaptor, PFC Absolute Maximum Ratings Parameter

 

Keywords - ALL TRANSISTORS DATASHEET

 ssf8n60.pdf Design, MOSFET, Power

 ssf8n60.pdf RoHS Compliant, Service, Triacs, Semiconductor

 ssf8n60.pdf Database, Innovation, IC, Electricity

 

 
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