ssf8n90a.pdf datasheet:

Advanced Power MOSFETFEATURESBVDSS = 900 V Avalanche Rugged TechnologyRDS(on) = 1.6 Rugged Gate Oxide Technology Lower Input CapacitanceID = 5.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 900V Low RDS(ON) : 1.247 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value UnitsVDSS Drain-to-Source Voltage V900Continuous Drain Current (TC=25 )5.5IDAContinuous Drain Current (TC=100 )3.51IDM Drain Current-Pulsed AO 32_VGS Gate-to-Source Voltage VEAS Single Pulsed Avalanche Energy 2 mJO 8011IAR Avalanche Current O 5.5 AEAR Repetitive Avalanche Energy 19.5 mJO3dv/dt Peak Diode Recovery dv/dt V/ns1.5 OTotal Power Dissipation (TC=25 )95 WPDLinear Derating Factor W/ 0.76Operating Junction a