ssh25n40a.pdf datasheet:

SSH25N40AAdvanced Power MOSFETFEATURESBVDSS = 400 V Avalanche Rugged TechnologyRDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input CapacitanceID = 25 A Improved Gate Charge Extended Safe Operating AreaTO-3P Lower Leakage Current : 10 A (Max.) @ VDS = 400V Low RDS(ON) : 0.162 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value UnitsVDSS Drain-to-Source Voltage V400Continuous Drain Current (TC=25 C)25IDAContinuous Drain Current (TC=100 C )15.1IDM Drain Current-Pulsed 1O 100 A +VGS Gate-to-Source Voltage 2 _ V30OEAS Single Pulsed Avalanche Energy1429 mJIAR Avalanche Current 1O 25 A1EAR Repetitive Avalanche Energy mJO 27.83dv/dt Peak Diode Recovery dv/dt O 4.0 V/nsTotal Power Dissipation (TC=25 C) W278PDLinear Derating Factor2.2