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ssh6n80as.pdf datasheet:

ssh6n80asssh6n80as

Advanced Power MOSFETFEATURESBVDSS = 800 V Avalanche Rugged TechnologyRDS(on) = 2.0 Rugged Gate Oxide Technology Lower Input CapacitanceID = 6 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 800V Low RDS(ON) : 1.472 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value UnitsVDSS Drain-to-Source Voltage 800 V Continuous Drain Current (TC=25 ) 6IDAContinuous Drain Current (TC=100 ) 3.81IDM Drain Current-Pulsed 24O A_ VGS Gate-to-Source Voltage V2EAS Single Pulsed Avalanche Energy 480O mJIAR Avalanche Current 1 6AOEAR Repetitive Avalanche Energy 201 mJOdv/dt Peak Diode Recovery dv/dt 3 2.0V/nsOTotal Power Dissipation (TC=25 ) 200WPDLinear Derating Factor 1.59W/ Operating Junction and- 55 to

 

Keywords - ALL TRANSISTORS DATASHEET

 ssh6n80as.pdf Design, MOSFET, Power

 ssh6n80as.pdf RoHS Compliant, Service, Triacs, Semiconductor

 ssh6n80as.pdf Database, Innovation, IC, Electricity

 

 
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