st2sc1383 st2sc1384.pdf datasheet:

ST 2SC1383 / 2SC1384 NPN Silicon Epitaxial Planar Transistor For low-frequency power amplification and driver Amplification. Complementary to 2SA683 to and 2SA684. On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Collector 3. Base TO-92 Plastic PackageAbsolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage 2SC1383 30 VCBO V 2SC1384 60 Collector Emitter Voltage 2SC1383 25 VCEO V 2SC1384 50 Emitter Base Voltage VEBO 5 VCollector Current IC 1 APeak Collector Current ICP 1.5 APower Dissipation Ptot 1 WJunction Temperature Tj 150 Storage Temperature Range Tstg - 55 to + 150 Characteristics at Ta = 25 Parameter Symbol Min. Typ. Max. Unit DC Current Gain at VCE = 10 V, IC = 500 mA Current Gain Group Q hFE 85 - 170 - R hFE 120 - 240 - S