us5u30.pdf datasheet:

US5U30 Transistor 2.5V Drive Pch+SBD MOSFET US5U30 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET TUMT5Schottky Barrier DIODE 2.01.3 Features 1) The US5U30 combines Pch MOSFET with a Schottky barrier diode in a TUMT5 package. 2) Low on-state resistance with fast switching. 3) Low voltage drive(2.5V) 4) Built-in schottky barrier diode has low forward voltage. Abbreviated symbol : U30 Applications Load switch, DC/DC conversion Packaging specifications Equivalent circuit Package Taping(5) (4)Code TRTypeBasic ordering unit (pieces) 30002US5U301(1)Gate(2)Source(1) (2) (3) (3)Anode(4)Cathode1 ESD protection diode(5)Drain2 Body diodeRev.B 1/4 0.2Max.US5U30 Transistor Absolute maximum ratings (Ta=25C) Parameter Symbol Limits UnitDrain-source voltage V VDSS -20Gate-so