wvm25n40.pdf datasheet:

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China WVM25N(IRF360)Power MOSFET(N-channel) TransistorFeatures: 1. Its voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards: QZJ840611 3. Use for high speed switch, circuit of power source contravariance. 4. Quality Class: GS, G. TECHNICAL DATA: (Ta = 25C ) Parameter name Symbols Unit Specifications Test Condition Drain-Source Voltage VDSS V 400(max.) Drain Current ID A 25(max.) Total Power Dissipation PD W 300(max.) (Tc=25C) Gate-Source Voltage VGSS V +20(max.) Junction Temperature Tjm C 150 Storage Temperature Tstg C -55~+150 Drain-Source Breakdown Voltage VGS=0V, ID=1mA V(BR)OSS V Min.:400 Static Drain-Source On-Resistance VGS=10V,