xp151a13comr.pdf datasheet:

XP151A13COMR20V N-Channel Enhancement Mode MOSFET VDS= 20V RDS(ON), Vgs@ 4.5V, Ids@ 3.6A 85m RDS(ON), Vgs@ 2.5V, Ids@ 2.0A 115m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions DGSSOT-23(PACKAGE)Millimeter MillimeterREF. REF. Min.Max. Min. Max.A 2.70 3.10 G 1.90 REF. B 2.40 2.80 H 1.00 1.30C 1.40 1.60 K 0.10 0.20D 0.35 0.50 J 0.40 -E 0 0.10 L 0.85 1.15F 0.45 0.55 M 0 10Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted) Parameter Symbol LimitUnitDrain-Source Voltage VDS 20V Gate-Source Voltage VGS 8Continuous Drain Current 2.3IDA Pulsed Drain Current 1) IDM 8TA = 25o1.25 2)Maximum Power Dissipation PD W TA = 75oC 0.8 oOperating Junction and Storage Temperature Range TJ, Tstg -55 to 150 C Juncti