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zxmp3f35n8.pdf datasheet:

zxmp3f35n8zxmp3f35n8

ZXMP3F35N8 30V SO8 P-channel enhancement mode MOSFET Summary V(BR)DSS (V) RDS(on) () ID(A) -30 0.012 @ VGS=-10V -17.10.018 @ VGS=-4.5VDescription This new generation Trench MOSFET from Zetex has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance making it ideal for battery protection and reverse connection applications Features Low on-resistance Low gate drive SO8 package Applications Power management functions S D Disconnect switches S D Reverse battery protection S DOrdering information G DTop viewDevice Reel size Tape width Quantity (inches) (mm) per reel ZXMP3F35N8TA 7 12 500Device marking ZXMP 3F35 Issue 1 - August 2008 1 www.zetex.com Diodes Incorporated 2008 www.diodes.comZXMP3F35N8 Absolute maximum ratings Parameter Symbol Lim

 

Keywords - ALL TRANSISTORS DATASHEET

 zxmp3f35n8.pdf Design, MOSFET, Power

 zxmp3f35n8.pdf RoHS Compliant, Service, Triacs, Semiconductor

 zxmp3f35n8.pdf Database, Innovation, IC, Electricity

 

 
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