2SB876 Todos los transistores

 

2SB876 Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SB876
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 20 W
   Tensión colector-base (Vcb): 120 V
   Tensión colector-emisor (Vce): 100 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 1.5 A
   Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 90
   Paquete / Cubierta: TO126
 

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2SB876 PDF detailed specifications

 9.1. Size:41K  panasonic
2sb873 e.pdf pdf_icon

2SB876

Transistor 2SB873 Silicon PNP epitaxial planer type For low-frequency power amplification Unit mm For DC-DC converter 5.9 0.2 4.9 0.2 For stroboscope Features Low collector to emitter saturation voltage VCE(sat). Large collector current IC. 0.7 0.1 2.54 0.15 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector... See More ⇒

 9.2. Size:37K  panasonic
2sb873.pdf pdf_icon

2SB876

Transistor 2SB873 Silicon PNP epitaxial planer type For low-frequency power amplification Unit mm For DC-DC converter 5.9 0.2 4.9 0.2 For stroboscope Features Low collector to emitter saturation voltage VCE(sat). Large collector current IC. 0.7 0.1 2.54 0.15 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector... See More ⇒

 9.3. Size:156K  jmnic
2sb870.pdf pdf_icon

2SB876

JMnic Product Specification Silicon PNP Power Transistors 2SB870 DESCRIPTION With TO-220C package Complement to type 2SD866 Low collector saturation voltage High collector current capability APPLICATIONS For power switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol ... See More ⇒

 9.4. Size:216K  inchange semiconductor
2sb871.pdf pdf_icon

2SB876

isc Silicon PNP Power Transistor 2SB871 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -20V(Min) (BR)CEO High Speed Switching Low Collector Saturation Voltage V = -0.6V(Max)@I = -10A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low voltage switching applications. ABSOLUTE MAXIMUM RATINGS(T... See More ⇒

Otros transistores... 2SB871A , 2SB872 , 2SB872A , 2SB873 , 2SB874 , 2SB874B , 2SB874C , 2SB875 , TIP2955 , 2SB877 , 2SB878 , 2SB879 , 2SB88 , 2SB880 , 2SB881 , 2SB882 , 2SB883 .

 

 
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