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2SC1635F . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SC1635F

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.8 W

Tensión colector-base (Vcb): 70 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 1 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 50

Empaquetado / Estuche: TO5

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2SC1635F Datasheet (PDF)

5.1. 2sc1624 2sc1625.pdf Size:90K _toshiba

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2SC1635F

 This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

5.2. 2sc1617.pdf Size:153K _toshiba

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 5.3. 2sc1678.pdf Size:61K _toshiba

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 This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

5.4. 2sc1627.pdf Size:210K _toshiba

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2SC1627 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC1627 Driver Stage Amplifier Applications Unit: mm Voltage Amplifier Applications • Complementary to 2SA817 • Driver stage application of 20 to 25 watts amplifiers. Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 80 V Collector-emitter voltage VCEO

 5.5. 2sc1627a.pdf Size:170K _toshiba

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5.6. 2sc1653 2sc1654.pdf Size:163K _nec

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5.7. 2sc1623.pdf Size:60K _nec

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DATA SHEET SILICON TRANSISTOR 2SC1623 AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAGE DIMENSIONS • High DC Current Gain: hFE = 200 TYP. in millimeters (VCE = 6.0 V, IC = 1.0 mA) 2.8 ± 0.2 • High Voltage: VCEO = 50 V 1.5 0.65+0.1 –0.15 ABSOLUTE MAXIMUM RATINGS Maximum Voltages and Current (TA = 25 ˚C) 2 Collector to

5.8. 2sc1674.pdf Size:298K _nec

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5.9. 2sc1621.pdf Size:229K _nec

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5.10. 2sc1675.pdf Size:42K _nec

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5.11. 2sc1622a.pdf Size:234K _nec

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5.12. 2sa821s 2sc1651s.pdf Size:34K _rohm

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2SA821S Transistors Transistors 2SC1651S (94L-183-A35) (94L-519-C35) 274

5.13. 2sc1545m 2sc1645.pdf Size:99K _rohm

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5.14. 2sb852k 2sa830s 2sd1383k 2sc1645s.pdf Size:52K _rohm

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2SB852K / 2SA830S Transistors Transistors 2SD1383K / 2SC1645S (96-118-B20) (96-205-D20) 280 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document a

5.15. 2sc1615.pdf Size:207K _rohm

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5.16. 2sc1652.pdf Size:311K _rohm

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5.17. 2sc1623-l5-l6-l7.pdf Size:326K _mcc

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2SC1623-L5 MCC Micro Commercial Components TM 2SC1623-L6 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SC1623-L7 Phone: (818) 701-4933 Fax: (818) 701-4939 Features • Halogen free available upon request by adding suffix "-HF" • Lead Free Finish/RoHS Compliant ("P" Suffix designates NPN Silicon RoHS Compliant. See ordering information) • High DC Cu

5.18. 2sc1688 e.pdf Size:56K _panasonic

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Transistor 2SC1688 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm 5.0± 0.2 4.0± 0.2 Features Small common emitter reverse transfer capacitance Cre. High transition frequency fT. Center at the emitter pin. Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol Ratings Unit +0.2 +0.2 0.45 –0.1 0.45 –0.1 Collector to base voltage VCBO 50 V 1.27 1.27

5.19. 2sc1687.pdf Size:48K _no

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5.20. 2sc1683.pdf Size:39K _no

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5.21. 2sc1684.pdf Size:55K _no

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5.22. 2sc1686.pdf Size:37K _no

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5.23. 2sc1674.pdf Size:78K _secos

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2SC1674 0.02 A , 30 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES TO-92  General Purpose Switching and Amplification G H Emitter Collector Base J CLASSIFICATION OF hFE A D Millimeter REF. Min. Max. Product-Rank 2SC1674-Y 2SC1674-GR 2SC1674-BL B A 4.40 4

5.24. 2sc1675.pdf Size:77K _secos

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2SC1675 0.05 A , 50 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES TO-92  Low Collector Current G H  General Purpose Switching and Amplification Emitter Base J Collector A D CLASSIFICATION OF hFE Millimeter B REF. Min. Max. Product-Rank 2SC1675-R 2SC1

5.25. 2sc1654.pdf Size:433K _secos

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2SC1654 0.05A , 180V NPN Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURE  High Frequency Power Amplifier Application A L  Power Switching Applications 3 3 Top View C B CLASSIFICATION OF hFE(1) 1 1 2 2 K E Product-Rank 2SC1654-N5 2SC1654-N6 2SC1654-N7 Range 90~180 1

5.26. 2sc1623k.pdf Size:492K _secos

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2SC1623K 0.1A , 60V NPN Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURE High DC current gain :hFE=200(Typ), VCE=6V, IC=1mA. A L High Voltage:VCEO=50V. 3 3 Top View C B CLASSIFICATION OF hFE 1 1 2 2 K E Product-Rank 2SC1623K-P 2SC1623K-Y 2SC1623K-G 2SC1623K-B Range 90~

5.27. 2sc1626 2sa816.pdf Size:112K _microelectronics

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5.28. 2sc1675.pdf Size:77K _microelectronics

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5.29. 2sc1674.pdf Size:108K _transys

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Transys Electronics L I M I T E D TO-92 Plastic-Encapsulated Transistors 2SC1674 TRANSISTOR (NPN) TO-92 FEATURE Power dissipation 1. EMITTER PCM: 0. 25 W (Tamb=25℃) 2. COLLECTOR Collector current 3. BASE ICM: 0.02 A . 1 2 3 Collector-base voltage V(BR)CBO: 30 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECT

5.30. 2sc1654.pdf Size:452K _htsemi

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2SC1654 TRANSISTOR(NPN) SOT–23 FEATURES  High Frequency Power Amplifier Application  Power Swithing Applications 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) 2. EMITTER Symbol Parameter Value Unit 3. COLLECTOR V Collector-Base Voltage 180 V CBO V Collector-Emitter Voltage 160 V CEO V Emitter-Base Voltage 5 V EBO IC Collector Current 50 mA PC C

5.31. 2sc1623.pdf Size:273K _gsme

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桂 林 斯 壯 微 電 子 有 限 責 任 公 司 Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM1623 MAXIMUM RATINGS ■MAXIMUM RATINGS 最大額定值 MAXIMUM RATINGS Characteristic 特性參數 Symbol 符號 Rating 額定值 Unit 單位 Collector-Emitter Voltage VCEO 50 Vdc 集電極-發射極電壓 C

5.32. 2sc1623 sot-23.pdf Size:224K _lge

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 2SC1623 SOT-23 Transistor(NPN) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features High DC current gain :hFE=200(Typ)VCE=6V, IC=1mA High voltage:VCEO=50V MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO 60 V Collector-Base Voltage Dimensions in inches and (millimeters) 50 V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 5 V I

5.33. 2sc1675.pdf Size:191K _lge

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 2SC1675(NPN) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features 2SC1675 is designed for use in AM converter AM/FM if amplifier and local oscillator of AM/FM tuner MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 30 V Dimensions in inches and (millimeter

5.34. 2sc1627a to-92mod.pdf Size:231K _lge

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2SC1627A TO-92MOD Transistor (NPN) TO-92MOD 1. EMITTER 1 2 2. COLLECTOR 3 3. BASE Features 5.800 6.200 Complementary to 2SA817A 8.400 Driver Stage Application of 30 to 35 Watts Amplifiers 8.800 0.900 1.100 0.400 MAXIMUM RATINGS(TA=25℃ unless otherwise noted) 0.600 13.800 14.200 Symbol parameter Value Units VCBO 80 V Collector-Base Voltage 1.500 TYP

5.35. 2sc1623.pdf Size:204K _wietron

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2SC1623 NPN General Purpose Transistors 3 1 P b Lead(Pb)-Free 2 SOT-23 MAXIMUM RATINGS(Ta=25°C) Rating Symbol Value Unit Collector-Emitter Voltage VCEO 50 V VCBO Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current - Continuous 150 mA Total Device Dissipation FR-5 Board PD 225 mW TA=25°C 1.8 mW/°C Derate above 25°C RθJA Thermal Resistance,

5.36. 2sc1623xlt1.pdf Size:373K _willas

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FM120-M WILLAS 2SC1623xLT1 THRU General Purpose Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize b

5.37. 2sc1623.pdf Size:258K _shenzhen

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Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC1623 TRANSISTOR (NPN) FEATURES 1. BASE High DC current gain :hFE=200(Typ)VCE=6V, IC=1mA 2. EMITTER High voltage:VCEO=50V 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO 60 V Collector-Base Voltage 50 V VCEO Collector

5.38. 2sc1623 sot-23.pdf Size:284K _can-sheng

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 深圳市灿升实业发展有限公司 ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors 2SC1623 TRANSISTOR (NPN) FEATURES High voltage:Vceo=50V MARKING:L6 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units (符号) (参数名称) (额定值) (单位) VCBO Collector-Base V

5.39. 2sc1627af.pdf Size:498K _blue-rocket-elect

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2SC1627AF(BR3DG1627AF) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-126F 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-126F Plastic Package. 特征 / Features 适合于 30~35W 的输出的驱动级,与 2SA817AF(BR3CG817AF)互补。 Driver stage of 30 to 35 watts application, complementary pair with 2SA817AF(BR3CG817AF). 用途 / Applications 驱

5.40. 2sc1623t.pdf Size:1530K _blue-rocket-elect

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2SC1623T(BR3DG1623T) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions SOT-89 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-89 Plastic Package. 特征 / Features 高h ,高 V 与 2SA812T(BR3CG812T)互补。 FE CEO, High hFE and VCEO, complementary pair with 2SA812T(BR3CG812T). 用途 / Applications 用于一般音频放大。 Audio frequency general amp

5.41. 2sc1623w.pdf Size:1122K _blue-rocket-elect

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2SC1623W(BR3DG1623W) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions SOT-323 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-323 Plastic Package. 特征 / Features 高h ,高 V 与 2SA812W(BR3CG812W)互补。 FE CEO, High hFE and VCEO, complementary pair with 2SA812W(BR3CG812W). 用途 / Applications 用于一般音频放大。 Audio frequency general a

5.42. l2sc1623rlt1g.pdf Size:282K _lrc

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LESHAN RADIO COMPANY, LTD. General Purpose Transistors L2SC1623QLT1G Pb-Free package is available S- Prefix for Automotive and Other Applications Requiring Unique Site Series and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-L2SC1623QLT1G Series DEVICE MARKING AND ORDERING INFORMATION 3 Device Marking Shipping L2SC1623QLT1G L5 3000/Tape&Reel S-L2SC1623QLT1G

5.43. l2sc1623swt1g.pdf Size:308K _lrc

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LESHAN RADIO COMPANY, LTD. General Purpose Transistors Pb-Free packkage is available L2SC1623SWT1G DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping 3 L2SC1623SWT1G L7 3000/Tape&Reel 10000/Tape&Reel L2SC1623SWT3G L7 1 2 MAXIMUM RATINGS SC-70 Rating Symbol Value Unit Collector-Emitter Voltage VCEO 50 V Collector-Base Voltage VCBO 60 V 3 COLLECTOR Emitter-Base Volt

5.44. l2sc1623slt1g.pdf Size:280K _lrc

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LESHAN RADIO COMPANY, LTD. L2SC1623QLT1G General Purpose Transistors Series Pb-Free package is available S- Prefix for Automotive and Other Applications Requiring Unique Site S-L2SC1623QLT1G and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. Series DEVICE MARKING AND ORDERING INFORMATION 3 Device Marking Shipping L2SC1623QLT1G L5 3000/Tape&Reel S-L2SC1623QLT1

5.45. l2sc1623qlt1g.pdf Size:318K _lrc

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LESHAN RADIO COMPANY, LTD. General Purpose Transistors L2SC1623QLT1G Pb-Free package is available S- Prefix for Automotive and Other Applications Requiring Unique Site Series and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-L2SC1623QLT1G Series DEVICE MARKING AND ORDERING INFORMATION 3 Device Marking Shipping L2SC1623QLT1G L5 3000/Tape&Reel S-L2SC1623QLT1G

5.46. 2sc1623.pdf Size:1128K _kexin

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SMD Type Transistors NPN Transistors 2SC1623 SOT-23 Unit: mm 2.9+0.1 -0.1 +0.1 0.4 -0.1 3 Features High DC Current Gain: hFE = 200 TYP. 1 2 +0.1 +0.05 VCE = 6.0 V, IC = 1.0 mA 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 High Voltage: VCE O = 50 V 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO 60 V Collec

5.47. 2sc1621.pdf Size:1489K _kexin

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SMD Type Transistors NPN Transistors 2SC1621 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 ■ Features ● Collector Current Capability IC=200mA ● Collector Emitter Voltage VCEO=20V 1 2 +0.1 0.95-0.1 0.1+0.05 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collect

5.48. 2sc1654.pdf Size:1222K _kexin

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SMD Type Transistors NPN Transistors 2SC1654 SOT-23 Unit: mm +0.1 2.9 -0.1 0.4+0.1 -0.1 3 ■ Features ● Collector Current Capability IC=50mA 1 2 ● Collector Emitter Voltage VCEO=160V +0.1 +0.05 0.95 -0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 180 Colle

5.49. 2sc1653.pdf Size:901K _kexin

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SMD Type Transistors NPN Transistors 2SC1653 SOT-23 Unit: mm +0.1 2.9 -0.1 0.4+0.1 -0.1 3 ■ Features ● Collector Current Capability IC=50mA 1 2 ● Collector Emitter Voltage VCEO=130V +0.1 +0.05 0.95 -0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 150 Colle

5.50. 2sc1609.pdf Size:177K _inchange_semiconductor

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INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1609 DESCRIPTION ·With TO-3 Package ·High voltage ·Wide area of safe operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage

5.51. 2sc1626.pdf Size:191K _inchange_semiconductor

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INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1626 DESCRIPTION ·Silicon NPN planar type ·Complementary to 2SA816 ·High breakdown voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Medium power amplifier applications ·Driver stage amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25℃)

5.52. 2sc1625.pdf Size:190K _inchange_semiconductor

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INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1625 DESCRIPTION ·Silicon NPN planar type ·Complementary to 2SA815 ·High breakdown voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Medium power amplifier applications ·Driver stage amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25℃)

5.53. 2sc1672.pdf Size:177K _inchange_semiconductor

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INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1672 DESCRIPTION ·Collector-Emitter Sustaining Voltage- V = 120V(Min) CEO(SUS) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Automotive ignition ·Switching regulator ·Motor control applications ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARA

5.54. 2sc1623.pdf Size:215K _inchange_semiconductor

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INCHANGE Semiconductor isc Silicon NPN Transistor 2SC1623 DESCRIPTION ·SOT-23 plastic-encapsulate transistors ·High DC current gain:h =200(TYP) FE @V = 6V, I = 1mA CE C ·High voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency general purpose amplifier ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMB

5.55. 2sc1683.pdf Size:189K _inchange_semiconductor

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INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1683 DESCRIPTION ·Silicon NPN triple diffused mesa ·High breakdown voltage ·Large collector dissipation ·Complementary pair with 2SA843 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·AF power amplifier ·Color TV vertical deflection output ABSO

5.56. 2sc1624 2sc1625.pdf Size:66K _inchange_semiconductor

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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1624 2SC1625 DESCRIPTION ·With TO-220 package ·Complement to type 2SA814/815 ·High breakdown voltage APPLICATIONS ·Medium power amplifier applications ·Driver stage amplifier applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum

5.57. 2sc1619.pdf Size:178K _inchange_semiconductor

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INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1619 DESCRIPTION ·High voltage ·Wide area of safe operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency output applications ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage

5.58. 2sc1617.pdf Size:178K _inchange_semiconductor

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INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1617 DESCRIPTION ·Silicon NPN triple diffused type ·High voltage ·Wide area of safe operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Black and white TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER

5.59. 2sc1678.pdf Size:185K _inchange_semiconductor

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INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1678 DESCRIPTION ·Silicon NPN planar type ·High breakdown voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Medium power amplifier applications ·Driver stage amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE

5.60. 2sc1610.pdf Size:177K _inchange_semiconductor

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INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1610 DESCRIPTION ·With TO-3 Package ·High voltage ·Wide area of safe operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage

5.61. 2sc1667.pdf Size:177K _inchange_semiconductor

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INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1667 DESCRIPTION ·Collector-Emitter Sustaining Voltage- V = 90V(Min) CEO(SUS) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Automotive ignition ·Switching regulator ·Motor control applications ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAM

5.62. 2sc1618.pdf Size:178K _inchange_semiconductor

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INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1618 DESCRIPTION ·High voltage ·Wide area of safe operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency output applications ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage

5.63. 2sc1624.pdf Size:191K _inchange_semiconductor

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INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1624 DESCRIPTION ·Silicon NPN planar type ·Complementary to 2SA814 ·High breakdown voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Medium power amplifier applications ·Driver stage amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25℃)

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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