2SC2922 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

LAPT 2SC2922 Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1216) Application Audio and General Purpose External Dimensions MT-200 Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol Ratings Symbol Conditions Ratings Unit Unit 0.2 6.0 0.3 36.4 VCBO 180 ICBO VCB=180V 100max A V 0.2 24.4 2.1 0.1 VCEO 180 IEBO VEB=5V 100m

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2922 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 180V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1216 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 )

Transistors 2SC2925 Silicon NPN epitaxial planar type For low-frequency output amplification Unit mm 5.0 0.2 4.0 0.2 Features High forward current transfer ratio hFE Low collector-emitter saturation voltage VCE(sat) 0.7 0.1 Absolute Maximum Ratings Ta = 25 C Parameter Symbol Rating Unit 0.45+0.15 0.45+0.15 0.1 0.1 Collector-base voltage (Emitter open) VC

Transistor 2SC2925 Silicon NPN epitaxial planer type For low-frequency output amplification Unit mm 5.0 0.2 4.0 0.2 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 60 V +0.2 +0.2 0.45 0.1 0.45 0.1 Collector to emitter vo

LAPT 2SC2921 Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1215) Application Audio and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions MT-200 Symbol Ratings Unit Symbol Conditions Ratings Unit 0.2 6.0 0.3 36.4 VCBO 160 V ICBO VCB=160V 100max A 0.2 24.4 2.1 VCEO 160 V VEB=5V 100max A 2- 3.

Complementary NPN-PNP Power Bipolar Transistor R 2SC2921(NPN) 2SA1215(PNP) APPLICATIONS High fidelity audio amplifier and other linear applications FEATURES V =160V (min) High collector voltage V =160V (min) CEO CEO NPN-PNP Complementary NPN-

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2927 DESCRIPTION With TO-220 package High collector-emitter voltage VCEO=300V High frequency fT=40MHz(Min) APPLICATIONS For use in line-operated color TV chroma output circuits and sound output circuits. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2923 DESCRIPTION With TO-220F package High VCEO Low COB APPLICATIONS For color TV chroma output applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT V

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2923 DESCRIPTION With TO-126 package High VCEO Low COB APPLICATIONS For color TV chroma output applications PINNING see Fig.2 PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT V Collector-base voltage Open emitter 30

isc Silicon NPN Power Transistor 2SC2921 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 160V(Min) (BR)CEO High Power Dissipation Complement to Type 2SA1215 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Colle

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2923 DESCRIPTION With TO-202 package High VCEO Low COB APPLICATIONS For color TV chroma output applications PINNING(See Fig.2) PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-202) and symbol 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALU

isc Silicon NPN Power Transistor 2SC2920 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V (Min) (BR)CEO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator Motor controls Ultrasonic oscillators Deflection circuits ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER

isc Silicon NPN Power Transistor 2SC2928 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 800V (Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed and high power applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER MAX UNIT V Coll

isc Silicon NPN Power Transistor 2SC2929 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers ABSOLUTE MAXI