2SC4496 Todos los transistores

2SC4497 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC4497 High Voltage Control Applications Unit mm High voltage VCBO = 300 V, VCEO = 300 V Low saturation voltage V = 0.5 V (max) CE (sat) Small collector output capacitance C = 3 pF (typ.) ob Complementary to 2SA1721 Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Ra

Ordering number EN3097 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1710/2SC4490 High-Definition CRT Display Video Output Applications Features Package Dimensions High breakdown voltage (VCEO 300V). unit mm Excellent high frequency characteristic. 2064 Adoption of MBIT process. [2SA1710/2SC4490] E Emitter C Collector B Base ( ) 2SA1710 SANYO NMP Spec

Ordering number EN3099 NPN Triple Diffused Planar Silicon Transistor 2SC4493 High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions High breakdown voltage. unit mm Small Cob. 2049C High reliability (Adoption of HVP process). [2SC4493] Intended for high-density mounting (Suitable for sets 10.2 4.5 1.3 whose height is restricted).

Ordering number EN3036 NPN Epitaxial Planar Silicon Transistor 2SC4491 L Load (Various Drivers) Switching Applications Applications Package Dimensions Suitable for use in switching of L load (motor unit mm drivers, printer hammer drivers, relay drivers). 2064A [2SC4491] 2.5 1.45 Features 6.9 1.0 Darlington connection. On-chip Zener diode of 60 10V between collector

2SC4499(L)/(S) Silicon NPN Triple Diffused Application High speed and high voltage switching Outline DPAK 4 4 1 2 1. Base 3 2. Collector 3. Emitter S Type 12 4. Collector 3 L Type 2SC4499(L)/(S) Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 500 V Collector to emitter voltage VCEO 400 V Emitter to base voltage VEBO 10 V Co

High hFE LOW VCE (sat) 2SC4495 Silicon NPN Triple Diffused Planar Transistor Application Audio Temperature Compensation and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions FM20(TO220F) Symbol 2SC4495 Symbol Conditions 2SC4495 Unit Unit 0.2 4.2 0.2 10.1 c0.5 2.8 VCBO 80 ICBO VCB=80V 10max A V VCEO 50 IEBO VEB

SMD Type Transistors NPN Transistors 2SC4497 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=100mA Collector Emitter Voltage VCEO=300V 1 2 +0.1 0.95-0.1 Complement to 2SA1721 0.1+0.05 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - B

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4495 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 50V(Min) (BR)CEO High DC Current Gain- h = 500(Min)@I = 0.5A FE C Fast switching speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio temperature compensation and general purpose ABSOLUTE MAXI