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2SC4496 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SC4496

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 30 W

Tensión colector-base (Vcb): 90 V

Corriente del colector DC máxima (Ic): 8 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 200

Empaquetado / Estuche: TO220

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2SC4496 Datasheet (PDF)

4.1. 2sc4497.pdf Size:253K _toshiba

2SC4496
2SC4496

2SC4497 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC4497 High Voltage Control Applications Unit: mm • High voltage: VCBO = 300 V, VCEO = 300 V • Low saturation voltage: V = 0.5 V (max) CE (sat) • Small collector output capacitance: C = 3 pF (typ.) ob • Complementary to 2SA1721 Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Ra

4.2. 2sc4491.pdf Size:76K _sanyo

2SC4496
2SC4496

Ordering number:EN3036 NPN Epitaxial Planar Silicon Transistor 2SC4491 L Load (Various Drivers) Switching Applications Applications Package Dimensions Suitable for use in switching of L load (motor unit:mm drivers, printer hammer drivers, relay drivers). 2064A [2SC4491] 2.5 1.45 Features 6.9 1.0 Darlington connection. On-chip Zener diode of 60 10V between collector and b

 4.3. 2sc4492.pdf Size:80K _sanyo

2SC4496
2SC4496

4.4. 2sc4493.pdf Size:87K _sanyo

2SC4496
2SC4496

Ordering number:EN3099 NPN Triple Diffused Planar Silicon Transistor 2SC4493 High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions High breakdown voltage. unit:mm Small Cob. 2049C High reliability (Adoption of HVP process). [2SC4493] Intended for high-density mounting (Suitable for sets 10.2 4.5 1.3 whose height is restricted). 1.2 0.

 4.5. 2sc4490.pdf Size:148K _sanyo

2SC4496
2SC4496

Ordering number:EN3097 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1710/2SC4490 High-Definition CRT Display Video Output Applications Features Package Dimensions High breakdown voltage (VCEO? 300V). unit:mm Excellent high frequency characteristic. 2064 Adoption of MBIT process. [2SA1710/2SC4490] E : Emitter C : Collector B : Base ( ) : 2SA1710 SANYO : NMP Specificatio

4.6. 2sc4499.pdf Size:39K _hitachi

2SC4496
2SC4496

2SC4499(L)/(S) Silicon NPN Triple Diffused Application High speed and high voltage switching Outline DPAK 4 4 1 2 1. Base 3 2. Collector 3. Emitter S Type 12 4. Collector 3 L Type 2SC4499(L)/(S) Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 500 V Collector to emitter voltage VCEO 400 V Emitter to base voltage VEBO 10 V Collec

4.7. 2sc4495.pdf Size:24K _sanken-ele

2SC4496

High hFE LOW VCE (sat) 2SC4495 Silicon NPN Triple Diffused Planar Transistor Application : Audio Temperature Compensation and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM20(TO220F) Symbol 2SC4495 Symbol Conditions 2SC4495 Unit Unit 0.2 4.2 0.2 10.1 c0.5 2.8 VCBO 80 ICBO VCB=80V 10max A V VCEO 50 IEBO VEB=6V 10ma

4.8. 2sc4497.pdf Size:971K _kexin

2SC4496
2SC4496

SMD Type Transistors NPN Transistors 2SC4497 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 ■ Features ● Collector Current Capability IC=100mA ● Collector Emitter Voltage VCEO=300V 1 2 +0.1 0.95-0.1 ● Complement to 2SA1721 0.1+0.05 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - B

Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , 431 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
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