2SC4621 Todos los transistores

 

2SC4621 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SC4621

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 70 W

Tensión colector-base (Vcb): 500 V

Tensión colector-emisor (Vce): 400 V

Corriente del colector DC máxima (Ic): 7 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 30 MHz

Ganancia de corriente contínua (hfe): 45

Empaquetado / Estuche: TO126

Búsqueda de reemplazo de transistor bipolar 2SC4621

 

2SC4621 Datasheet (PDF)

4.1. 2sc4622.pdf Size:129K _update

2SC4621



4.2. 2sc4623.pdf Size:127K _sanyo

2SC4621
2SC4621

Ordering number:EN3644 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1777/2SC4623 Very High-Definition CRT Display Video Output Applications Features Package Dimensions High fT : fT=400MHz (typ). unit:mm High breakdown voltage : VCEO? 250V(min). 2042B High current. [2SA1777/2SC4623] Small reverse transfer capacitance and excellent high-frequnecy characteristic : Cre=3.4

 4.3. 2sa1759 2sc4505 2sc4620.pdf Size:45K _rohm

2SC4621
2SC4621

2SA1759 Transistors Transistors 2SC4505 / 2SC4620 (96-97-A324) (96-178-C300) 305

4.4. 2sc4626 e.pdf Size:55K _panasonic

2SC4621
2SC4621

Transistor 2SC4626 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm Complementary to 2SA1790 1.6 0.15 0.4 0.8 0.1 0.4 Features Optimum for RF amplification of FM/AM radios. 1 High transition frequency fT. SS-Mini type package, allowing downsizing of the equipment 3 and automatic insertion through the tape packing. 2 Absolute Maximum Ratings (Ta=25?C) P

 4.5. 2sc4627.pdf Size:57K _panasonic

2SC4621
2SC4621

Transistor 2SC4627 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm 1.6 0.15 0.4 0.8 0.1 0.4 Features Optimum for RF amplification of FM/AM radios. 1 High transition frequency fT. SS-Mini type package, allowing downsizing of the equipment 3 and automatic insertion through the tape packing. 2 Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Un

4.6. 2sc4626.pdf Size:52K _panasonic

2SC4621
2SC4621

Transistor 2SC4626 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm Complementary to 2SA1790 1.6 0.15 0.4 0.8 0.1 0.4 Features Optimum for RF amplification of FM/AM radios. 1 High transition frequency fT. SS-Mini type package, allowing downsizing of the equipment 3 and automatic insertion through the tape packing. 2 Absolute Maximum Ratings (Ta=25?C) P

4.7. 2sc4627 e.pdf Size:60K _panasonic

2SC4621
2SC4621

Transistor 2SC4627 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm 1.6 0.15 0.4 0.8 0.1 0.4 Features Optimum for RF amplification of FM/AM radios. 1 High transition frequency fT. SS-Mini type package, allowing downsizing of the equipment 3 and automatic insertion through the tape packing. 2 Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Un

4.8. 2sc4627j e.pdf Size:39K _panasonic

2SC4621
2SC4621

Transistor 2SC4627J Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm 1.60 0.05 0.80 0.80 0.05 0.425 0.425 Features Optimum for RF amplification of FM/AM radios. High transition frequency fT. SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing. (Flat type) +0.05 0.850.03 Absolute Maximum Ratings (Ta

4.9. 2sc4628.pdf Size:29K _hitachi

2SC4621
2SC4621

2SC4628 Silicon NPN Planar Application High frequency amplifier Outline TO-92 (2) 1. Emitter 2. Collector 3. Base 3 2 1 2SC4628 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 20 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 3V Collector current IC 20 mA Collector power dissipation PC 200 mW Junction temperat

4.10. 2sc4629.pdf Size:23K _hitachi

2SC4621
2SC4621

2SC4629 Silicon NPN Epitaxial Application UHF / VHF wide band amplifier Outline TO-92 (2) 1. Base 2. Emitter 3. Collector 3 2 1 2SC4629 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 9V Emitter to base voltage VEBO 1.5 V Collector current IC 50 mA Collector power dissipation PC 600 mW Junction

4.11. 2sc4624.pdf Size:179K _mitsubishi

2SC4621
2SC4621

4.12. 2sc4622.pdf Size:265K _inchange_semiconductor

2SC4621
2SC4621

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4622 DESCRIPTION ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min) ·High Switching Speed ·Low Collector Saturation Voltage ·High Reliability APPLICATIONS ·Switching regulators ·Ultrasonic generators ·Solid state relay ·General purpose power amplifiers ABSOLUTE MA

Otros transistores... 2SC431 , 2SC4310 , 2SC4311 , 2SC4312 , 2SC4313 , 2SC4314 , 2SC4315 , 2SC4316 , BC147 , 2SC4318 , 2SC432 , 2SC4320 , 2SC4321 , 2SC4322 , 2SC4323 , 2SC4324 , 2SC4325 .

 
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