2SD1015 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD1015
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.9 W
Tensión colector-base (Vcb): 140 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 50 V
Corriente del colector DC máxima (Ic): 2 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 150
Paquete / Cubierta: TO92
Búsqueda de reemplazo de transistor bipolar 2SD1015
2SD1015 Datasheet (PDF)
2sd1012.pdf
Ordering number:ENN676DPNP/NPN Epitaxial Planar Silicon Transistors2SB808/2SD1012Low-Voltage Large-CurrentAmplifier ApplicationsPackage Dimensionsunit:mm2033A[2SB808/2SD1012]2.24.00.40.50.40.41 2 31.3 1.31 : Emitter2 : Collector( ) : 2SB8083 : Base3.03.8 SANYO : SPASpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol Conditions R
2sd1011 e.pdf
Transistor2SD1011Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mm5.0 0.2 4.0 0.2FeaturesHigh foward current transfer ratio hFE.Low collector to emitter saturation voltage VCE(sat).High emitter to base voltage VEBO.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit +0.2 +0.20.45 0.1 0.45 0.1Collector to base voltage VCBO 1
2sd1011.pdf
Transistor2SD1011Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mm5.0 0.2 4.0 0.2FeaturesHigh foward current transfer ratio hFE.Low collector to emitter saturation voltage VCE(sat).High emitter to base voltage VEBO.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit +0.2 +0.20.45 0.1 0.45 0.1Collector to base voltage VCBO 1
2sd1010 e.pdf
Transistor2SD1010Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mm5.0 0.2 4.0 0.2FeaturesHigh foward current transfer ratio hFE.Low collector to emitter saturation voltage VCE(sat).High emitter to base voltage VEBO.Low noise voltage NV.Absolute Maximum Ratings (Ta=25C)+0.2 +0.20.45 0.1 0.45 0.1Parameter Symbol Ratings Unit1.27 1.2
2sd1010.pdf
Transistor2SD1010Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mm5.0 0.2 4.0 0.2FeaturesHigh foward current transfer ratio hFE.Low collector to emitter saturation voltage VCE(sat).High emitter to base voltage VEBO.Low noise voltage NV.Absolute Maximum Ratings (Ta=25C)+0.2 +0.20.45 0.1 0.45 0.1Parameter Symbol Ratings Unit1.27 1.2
2sd1016.pdf
isc Product Specificationisc Silicon NPN Power Transistor 2SD1016DESCRIPTIONHigh Collector-Base Voltage-: V = 1500V(Min)CBOHigh Current Capability100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSDesigned for use in large screen color deflection circuits .ABSOLUTE MAXIMUM RATINGS(T =25)aSYMB
Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: BUX40S | GET931 | 2N4935
History: BUX40S | GET931 | 2N4935
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050