2SD1015 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD1015
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.9 W
Tensión colector-base (Vcb): 140 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 50 V
Corriente del colector DC máxima (Ic): 2 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 150
Empaquetado / Estuche: TO92
Búsqueda de reemplazo de transistor bipolar 2SD1015
2SD1015 Datasheet (PDF)
1.1. 2sd1015.pdf 
Size:39K _sony
4.1. 2sd1012.pdf Size:57K _sanyo
Ordering number:ENN676D PNP/NPN Epitaxial Planar Silicon Transistors 2SB808/2SD1012 Low-Voltage Large-Current Amplifier Applications Package Dimensions unit:mm 2033A [2SB808/2SD1012] 2.2 4.0 0.4 0.5 0.4 0.4 1 2 3 1.3 1.3 1 : Emitter 2 : Collector ( ) : 2SB808 3 : Base 3.0 3.8 SANYO : SPA Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Conditions R
4.2. 2sd1011 e.pdf Size:42K _panasonic
Transistor 2SD1011 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 5.0± 0.2 4.0± 0.2 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol Ratings Unit +0.2 +0.2 0.45 –0.1 0.45 –0.1 Collector to base voltage VCBO 1
4.3. 2sd1010.pdf Size:38K _panasonic
Transistor 2SD1010 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 5.0± 0.2 4.0± 0.2 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. Low noise voltage NV. Absolute Maximum Ratings (Ta=25˚C) +0.2 +0.2 0.45 –0.1 0.45 –0.1 Parameter Symbol Ratings Unit 1.27 1.2
4.4. 2sd1010 e.pdf Size:42K _panasonic
Transistor 2SD1010 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 5.0± 0.2 4.0± 0.2 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. Low noise voltage NV. Absolute Maximum Ratings (Ta=25˚C) +0.2 +0.2 0.45 –0.1 0.45 –0.1 Parameter Symbol Ratings Unit 1.27 1.2
4.5. 2sd1011.pdf Size:42K _panasonic
Transistor 2SD1011 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 5.0± 0.2 4.0± 0.2 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol Ratings Unit +0.2 +0.2 0.45 –0.1 0.45 –0.1 Collector to base voltage VCBO 1
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
