2SD2561O Todos los transistores

 

2SD2561O . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD2561O

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 200 W

Tensión colector-base (Vcb): 150 V

Tensión colector-emisor (Vce): 150 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 17 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 70 MHz

Capacitancia de salida (Cc): 120 pF

Ganancia de corriente contínua (hfe): 5000

Empaquetado / Estuche: MT200

Búsqueda de reemplazo de transistor bipolar 2SD2561O

 

2SD2561O Datasheet (PDF)

3.1. 2sd2561.pdf Size:24K _sanken-ele

2SD2561O

Equivalent circuit C B Darlington 2SD2561 (70?) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1648) Application : Audio, Series Regulator and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions MT-200 Symbol Symbol 2SD2561 Unit Conditions 2SD2561 Unit 0.2 6.0 0.3 36.4 ICBO VCBO 150 V VCB=150V 100max

3.2. 2sd2561.pdf Size:144K _inchange_semiconductor

2SD2561O
2SD2561O

Inchange Semiconductor Product Specification Silicon NPN Darlington Power Transistors 2SD2561 DESCRIPTION ·With MT-200 package ·Complement to type 2SB1648 APPLICATIONS ·Audio ,series regulator and general purpose PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCB

 4.1. 2sd2568.pdf Size:44K _rohm

2SD2561O

2SD2568 Transistors Power Transistor(400V,0.5A) 2SD2568 Features 1) High breakdown voltage.(BVCEO=400V) Absolute maximum ratings (Ta = 25C) Parameter Symbol Limits Unit Collector-base voltage VCBO 400 V Collector-emitter voltage VCEO 400 V Emitter-base voltage VEBO 7 V Collector current IC 0.5 A 10 Collector power dissipation PC W(Tc=25C) Junction temperature Tj 150 C Storage

4.2. 2sd2565.pdf Size:38K _panasonic

2SD2561O
2SD2561O

Transistor 2SD2565 Silicon NPN triple diffusion planer type For high voltage-withstand switching Unit: mm 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features High collector to base voltage VCBO. High collector to emitter voltage VCEO. 0.65 max. Large collector power dissipation PC. Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and

 4.3. 2sd2565 e.pdf Size:43K _panasonic

2SD2561O
2SD2561O

Transistor 2SD2565 Silicon NPN triple diffusion planer type For high voltage-withstand switching Unit: mm 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features High collector to base voltage VCBO. High collector to emitter voltage VCEO. 0.65 max. Large collector power dissipation PC. Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and

4.4. 2sd2560.pdf Size:24K _sanken-ele

2SD2561O

Equivalent circuit C B Darlington 2SD2560 (70?) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1647) Application : Audio, Series Regulator and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions MT-100(TO3P) Symbol 2SD2560 Unit Symbol Conditions 2SD2560 Unit 0.2 4.8 0.4 15.6 VCBO 150 V ICBO VCB=150V 10

 4.5. 2sd2562.pdf Size:24K _sanken-ele

2SD2561O

Equivalent circuit C B Darlington 2SD2562 (70?) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1649) Application : Audio, Series Regulator and General Purpose Absolute maximum ratings Electrical Characteristics (Ta=25C) External Dimensions FM100(TO3PF) (Ta=25C) Symbol 2SD2562 Unit Symbol Conditions 2SD2562 Unit 0.2 0.2 5.5 15.6 VCBO 150 V ICBO VCB=150V 100

4.6. 2sd2560.pdf Size:124K _inchange_semiconductor

2SD2561O
2SD2561O

Inchange Semiconductor Product Specification Silicon NPN Darlington Power Transistors 2SD2560 DESCRIPTION Ў¤ With TO-3PN package Ў¤ Complement to type 2SB1647 APPLICATIONS Ў¤ Audio ,regulator and general purpose PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta=Ўж ) SYMBO

4.7. 2sd2562.pdf Size:244K _inchange_semiconductor

2SD2561O
2SD2561O

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD2562 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) ·High DC Current Gain- : hFE= 5000( Min.) @(IC= 10A, VCE= 4V) ·Low Collector Saturation Voltage- : VCE(sat)= 2.5V(Max)@ (IC= 10A, IBB= 10mA) ·Complement to Type 2SB1649 APPLICATIONS ·Designed for seri

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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