2SD2561O
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD2561O
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 200
W
Tensión colector-base (Vcb): 150
V
Tensión colector-emisor (Vce): 150
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 17
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 70
MHz
Capacitancia de salida (Cc): 120
pF
Ganancia de corriente contínua (hfe): 5000
Paquete / Cubierta:
MT200
Búsqueda de reemplazo de transistor bipolar 2SD2561O
2SD2561O
Datasheet (PDF)
7.1. Size:24K sanken-ele
2sd2561.pdf 
Equivalent circuit CBDarlington 2SD2561(70)ESilicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1648)Application : Audio, Series Regulator and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions MT-200SymbolSymbol 2SD2561 Unit Conditions 2SD2561 Unit0.26.00.336.4ICBOVCBO 150 V VCB=150
7.2. Size:221K inchange semiconductor
2sd2561.pdf
isc Silicon NPN Darlington Power Transistor 2SD2561DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 150V(Min)(BR)CEOHigh DC Current Gain-: h = 5000( Min.) @(I = 10A, V = 4V)FE C CELow Collector Saturation Voltage-: V = 2.5V(Max)@ (I = 10A, I = 10mA)CE(sat) C BComplement to Type 2SB1648Minimum Lot-to-Lot variations for robust deviceperformance and reliable
8.1. Size:44K rohm
2sd2568.pdf
2SD2568TransistorsPower Transistor(400V,0.5A)2SD2568 Features1) High breakdown voltage.(BVCEO=400V) Absolute maximum ratings (Ta = 25C)Parameter Symbol Limits UnitCollector-base voltage VCBO 400 VCollector-emitter voltage VCEO 400 VEmitter-base voltage VEBO 7 VCollector current IC 0.5 A10Collector power dissipation PC W(Tc=25C)Junction temperature Tj150 CSt
8.2. Size:43K panasonic
2sd2565 e.pdf
Transistor2SD2565Silicon NPN triple diffusion planer typeFor high voltage-withstand switchingUnit: mm2.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesHigh collector to base voltage VCBO.High collector to emitter voltage VCEO.0.65 max.Large collector power dissipation PC.Low collector to emitter saturation voltage VCE(sat).M type package allowing easy automat
8.3. Size:38K panasonic
2sd2565.pdf
Transistor2SD2565Silicon NPN triple diffusion planer typeFor high voltage-withstand switchingUnit: mm2.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesHigh collector to base voltage VCBO.High collector to emitter voltage VCEO.0.65 max.Large collector power dissipation PC.Low collector to emitter saturation voltage VCE(sat).M type package allowing easy automat
8.4. Size:24K sanken-ele
2sd2562.pdf
Equivalent circuit CBDarlington 2SD2562(70)ESilicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1649)Application : Audio, Series Regulator and General Purpose Absolute maximum ratings Electrical Characteristics (Ta=25C) External Dimensions FM100(TO3PF)(Ta=25C)Symbol 2SD2562 Unit Symbol Conditions 2SD2562 Unit0.20.2 5.515.6VCBO 150 V ICBO VCB
8.5. Size:24K sanken-ele
2sd2560.pdf
Equivalent circuit CBDarlington 2SD2560(70)ESilicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1647)Application : Audio, Series Regulator and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions MT-100(TO3P)Symbol 2SD2560 Unit Symbol Conditions 2SD2560Unit0.24.80.415.6VCBO 150 V ICBO VC
8.6. Size:222K inchange semiconductor
2sd2562.pdf
isc Silicon NPN Darlington Power Transistor 2SD2562DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 150V(Min)(BR)CEOHigh DC Current Gain-: h = 5000( Min.) @(I = 10A, V = 4V)FE C CELow Collector Saturation Voltage-: V = 2.5V(Max)@ (I = 10A, I = 10mA)CE(sat) C BComplement to Type 2SB1649Minimum Lot-to-Lot variations for robust deviceperformance and reliable
8.7. Size:180K inchange semiconductor
2sd256.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD256DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 40V(Min)(BR) CEOCollector Power Dissipation-: P = 25W @T = 25C CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose amplifier and switchingapplications.ABSOLUTE MAXIMU
8.8. Size:216K inchange semiconductor
2sd2560.pdf
isc Silicon NPN Darlington Power Transistor 2SD2560DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 150V(Min)(BR)CEOHigh DC Current Gain-: h = 5000( Min.) @(I = 10A, V = 4V)FE C CELow Collector Saturation Voltage-: V = 2.5V(Max)@ (I = 10A, I = 10mA)CE(sat) C BComplement to Type 2SB1647Minimum Lot-to-Lot variations for robust deviceperformance and reliable
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